Analysis of As, P Diffusion and Defect Evolution during Sub-millisecond Non-melt Laser Annealing based on an Atomistic Kinetic Monte Carlo Approach

Author

Noda, T. ; Vandervorst, W. ; Felch, S. ; Parihar, V. ; Cuperus, A. ; Mcintosh, R. ; Vrancken, C. ; Rosseel, E. ; Bender, H. ; van Daele, B. ; Niwa, M. ; Umimoto, H. ; Schreutelkamp, R. ; Absil, P.P. ; Jurczak, M. ; De Meyer, K. ; Biesemans, S. ; Hoffmann,

Author_Institution

Matsushita Electr. Ind. Co., Ltd., Kyoto

fYear

2007

fDate

10-12 Dec. 2007

Firstpage

955

Lastpage

958

Abstract

n-type dopant diffusion during sub-millisecond (ms) non-melt laser annealing (NLA) is investigated through the experiments and atomistic KMC modeling. Laser-only annealing can improve the n-type dopant activation and achieve shallow junctions. KMC model with vacancy complexes indicates that laser-only annealing for nFET can achieve highly activated junctions and reduce dopant fluctuations in the channel region and that P is an attractive replacement for the As extension with laser-only anneal.

Keywords

Monte Carlo methods; arsenic; diffusion; field effect transistors; interstitials; laser beam annealing; phosphorus; semiconductor device models; semiconductor doping; semiconductor junctions; vacancies (crystal); As; P; atomistic kinetic Monte Carlo approach; defect evolution; diffusion analysis; dopant fluctuations reduction; n-type dopant activation; n-type dopant diffusion; nFET; shallow junctions; sub-millisecond nonmelt laser annealing; vacancy complexes; Annealing; Atom lasers; Atomic beams; Atomic layer deposition; Kinetic theory; Laser modes; Monte Carlo methods; Optical materials; Semiconductor process modeling; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2007. IEDM 2007. IEEE International

Conference_Location

Washington, DC

Print_ISBN

978-1-4244-1507-6

Electronic_ISBN

978-1-4244-1508-3

Type

conf

DOI

10.1109/IEDM.2007.4419111

Filename

4419111