DocumentCode :
2606314
Title :
Fabrication of vertical position-controllable GaN nanowires on (111) Si substrate
Author :
Wang, Congshun ; Yang, Zhenchuan ; Zhang, Baoshun ; Wang, Yong ; Wang, Hui ; Lau, Kei May ; Chen, Kevin J.
Author_Institution :
Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Hong Kong
fYear :
2007
fDate :
2-5 Aug. 2007
Firstpage :
809
Lastpage :
812
Abstract :
A technique for fabrication vertical position-controllable GaN nanowires is developed and discussed. The fabrication process combines selective area growth of GaN pyramids on substrate masked with hexagonal hole pattern and wet chemical etching of the grown GaN pyramids. GaN nanowires are fabricated to demonstrate this technique. The mechanisms for the formation of the vertical nanowires are also further discussed by using the contrastive experiments.
Keywords :
III-V semiconductors; etching; gallium compounds; nanotechnology; nanowires; semiconductor growth; wide band gap semiconductors; GaN; hexagonal hole pattern; selective area growth; vertical position-controllable nanowires; wet chemical etching; Chemicals; Crystallography; Dielectric substrates; Dry etching; Fabrication; Gallium nitride; Microelectronics; Nanostructures; Nanowires; Wet etching; Gallium nitride; crystallographic-dependent etching; dislocation-dependent etching; nanowires;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanotechnology, 2007. IEEE-NANO 2007. 7th IEEE Conference on
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-0607-4
Electronic_ISBN :
978-1-4244-0608-1
Type :
conf
DOI :
10.1109/NANO.2007.4601308
Filename :
4601308
Link To Document :
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