Fabrication of vertical position-controllable GaN nanowires on (111) Si substrate

A technique for fabrication vertical position-controllable GaN nanowires is developed and discussed. The fabrication process combines selective area growth of GaN pyramids on substrate masked with hexagonal hole pattern and wet chemical etching of the grown GaN pyramids. GaN nanowires are fabricated to demonstrate this technique. The mechanisms for the formation of the vertical nanowires are also further discussed by using the contrastive experiments.