Title :
Experimental and Theoretical Analysis of Dopant Diffusion and C Evolution in High-C Si:C Epi Layers: Optimization of Si:C Source and Drain Formed by Post-Epi Implant and Activation Anneal
Author :
Cho, Y. ; Zographos, N. ; Thirupapuliyur, S. ; Moroz, V.
Author_Institution :
Appl. Mater., Sunnyvale
Abstract :
A comprehensive physics based calibrated model was developed to explain the observed n-type dopant diffusion and substitutional carbon (Csub) evolution in high C (>1%) Si:C epitaxial films. Both experimentally and theoretically, we demonstrated a viable doping scheme with near 100% Csub retention using undoped Si:C epi with post-epi implant and optimized anneal.
Keywords :
annealing; carbon; diffusion; field effect transistors; semiconductor device models; semiconductor doping; semiconductor epitaxial layers; silicon; Si:C; activation annealing; carbon evolution; dopant diffusion; epitaxial films; laser annealing; nFET device performance; post-epi implant; Annealing; Capacitive sensors; Doping; Epitaxial growth; Implants; Laser modes; Physics; Semiconductor process modeling; Stress; Time measurement;
Conference_Titel :
Electron Devices Meeting, 2007. IEDM 2007. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4244-1507-6
Electronic_ISBN :
978-1-4244-1508-3
DOI :
10.1109/IEDM.2007.4419112
