Title :
Novel doping technology for a 1nm NiSi/Si junction with dipoles comforting Schottky (DCS) barrier
Author :
Yamauchi, Takashi ; Nishi, Yoshifumi ; Tsuchiya, Yoshinori ; Kinoshita, Atsuhiro ; Koga, Junji ; Kato, Koichi
Author_Institution :
Toshiba Corp., Kawasaki
Abstract :
This paper studies the Schottky barrier height (SBH) modulation effect induced by dipoles, which several types of impurity atoms generate at the nickel silicide (NiSi)/silicon (Si) interface, through both first-principles calculations and experimental methods. Based on these understandings, we discuss their applicability to the DCS junction, leading to a principle for choosing dopants.
Keywords :
Schottky barriers; semiconductor doping; Schottky barrier height modulation; dipoles comforting Schottky barrier; doping technology; Atomic layer deposition; Atomic measurements; Distributed control; Doping; Electrical resistance measurement; Ion implantation; Nickel; Schottky diodes; Silicidation; Temperature;
Conference_Titel :
Electron Devices Meeting, 2007. IEDM 2007. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4244-1507-6
Electronic_ISBN :
978-1-4244-1508-3
DOI :
10.1109/IEDM.2007.4419113
