Title :
Growth of crooked silicon nanowires by carbothermal evaporation
Author :
Hutagalung, Sabar D. ; Aziz, Azma F Abdul ; Yaacob, Khatijah A.
Author_Institution :
Sch. of Mater. & Miner. Resources Eng., Univ. Sains Malaysia, Nibong Tebal
Abstract :
Silicon nanowires (SiNWs) were synthesized by carbothermal evaporation technique from starting materials of silicon powder mixed with activated carbon. The evaporated silicon is carried by flowing inert gas and collected on Si(111) substrate. The results show that SiNWs were formed in groups are straight at some part and vertically at the other part with each group grew in the same direction. Overlapping in the growth direction produced another group of nanowires with crooked morphology. The nanowires were formed in groups are straight at some part and vertically at the other part with each group grew in the same direction. Overlapping in the growth direction produced another group of nanowires with crooked morphology.
Keywords :
elemental semiconductors; evaporation; nanotechnology; nanowires; semiconductor growth; semiconductor quantum wires; silicon; surface morphology; Si; Si(111) substrate; activated carbon; carbothermal evaporation method; crooked morphology; flowing inert gas; growth direction; silicon nanowire synthesis; silicon powder; Chemical elements; Furnaces; Inorganic materials; Morphology; Nanowires; Organic materials; Powders; Silicon; Temperature; Vacuum technology; activated carbon; carbothermal evaporation; crooked; silicon nanowires; silicon powder;
Conference_Titel :
Nanotechnology, 2007. IEEE-NANO 2007. 7th IEEE Conference on
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-0607-4
Electronic_ISBN :
978-1-4244-0608-1
DOI :
10.1109/NANO.2007.4601312
