DocumentCode :
2606384
Title :
Fusing Mechanism of Nichrome Thin Films
Author :
Davidson, J.L. ; Gibson, J.D. ; Harris, S.A. ; Rossiter, T.J.
Author_Institution :
Harris Semiconductor, P. O. Box 883, Melbourne, Florida 32901
fYear :
1976
fDate :
27851
Firstpage :
173
Lastpage :
181
Abstract :
(1) Conduction electrons in nichrome have a short mean-free path. This maximizes E2R heating and precludes electromigration in the direction of electron flow as a fusing mechanism. (2) Transmission electron microscopy is the only effective analytical tool to characterize the programmed fuse gap structure. (3) Nichrome fuses program by molten metal (nickel, chrome) ions moving in the presence of an electric field. The final structure resembles a frozen splash and is described by fluid dynamics. (4) Thermal analysis coupled with empirical programmed fuse data indicate a threshold power density for fusing. If this power density is exceeded, which can be assured if the programming time utilized is as specified, the fuse gap will be wide and reliable. If this power density threshold is only matched, it is possible to create a marginal fuse. (5) Life test results indicate programmed PROM reliability is equivalent to devices of the same complexity that do not utilize fusible links.
Keywords :
Couplings; Electromigration; Fluid dynamics; Fuses; Life testing; Nickel; PROM; Resistance heating; Transistors; Transmission electron microscopy;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium, 1976. 14th Annual
Conference_Location :
Las Vegas, NV, USA
ISSN :
0735-0791
Type :
conf
DOI :
10.1109/IRPS.1976.362738
Filename :
4208122
Link To Document :
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