Title :
Bulk and interface band diagrams of advanced intermetal dielectrics
Author :
Guedj, C. ; Martinez, E. ; Licitra, C. ; Imbert, G. ; Barnes, J.P. ; Lafond, D. ; Toffoli, A. ; Arnal, V. ; Anaud, L.
Author_Institution :
CEA-LETI MINATEC, Grenoble
Abstract :
Bulk and interface band diagrams are presented for porous ultra-low K SiCOH, dense SiCOH, TEOS and USG dielectrics, SiCON and SiCN etch stop layers, TaN and Ta2O5 barrier layers. These results may explain basic optical and electronic properties of advanced interconnects.
Keywords :
dielectric materials; semiconductor device reliability; advanced interconnects; advanced intermetal dielectrics; bulk band diagrams; electronic properties; interface band diagrams; optical properties; Chemicals; Copper; Current measurement; Dielectric materials; Dielectric measurements; Leakage current; Materials testing; Nondestructive testing; Photonic band gap; Strain measurement;
Conference_Titel :
Electron Devices Meeting, 2007. IEDM 2007. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4244-1507-6
Electronic_ISBN :
978-1-4244-1508-3
DOI :
10.1109/IEDM.2007.4419117
