DocumentCode :
2606442
Title :
Reliability Studies of Polysilicon Fusible Link PROM´s
Author :
Smith, R.C. ; Rosenberg, S.J. ; Barrett, C.R.
Author_Institution :
Intel Corporation, 3065 Bowers Avenue, Santa Clara, California 95051
fYear :
1976
fDate :
27851
Firstpage :
193
Lastpage :
197
Abstract :
Reliability aspects of polycrystalline silicon fusible link PROM\´s have been investigated and discussed in terms of manufacturing and accelerated lifetesting. lifetest data indicate that the "grow back" failure made operative in nichrome fuse PROM\´s is not present in polysilicon fuses. Failure rates associated with the fuse structure are considerably below the inherent failure rate of the bipolar device.
Keywords :
Acceleration; Electrons; Fuses; Manufacturing; PROM; Packaging; Paper technology; Shape; Silicon; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium, 1976. 14th Annual
Conference_Location :
Las Vegas, NV, USA
ISSN :
0735-0791
Type :
conf
DOI :
10.1109/IRPS.1976.362741
Filename :
4208125
Link To Document :
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