Title :
FAMOS PROM Reliability Studies
Author_Institution :
Group Leader, Reliability Engineering, Intel Corporation, 3065 Bowers Avenue, Santa Clara, Calif. 95051, (408) 246-7501
Abstract :
Since the introduction of the FAMOS PROM structure and its implementation in a 2048 bit P-Channel MOS PROM, few device reliability data have been available. This paper presents data taken on both the P-Channel 2048 bit FAMOS PROM and the 8192 bit N-Channel FAMOS PROM. The reliability studies undertaken fall into two categories, PROM retention tests and integrated circuit reliability tests. The combination of tests employed provide the basis for activation energy and failure rate calculations.
Keywords :
Circuit testing; Electrons; Gears; Integrated circuit reliability; Integrated circuit testing; MOS devices; Nonvolatile memory; PROM; Temperature; Threshold voltage;
Conference_Titel :
Reliability Physics Symposium, 1976. 14th Annual
Conference_Location :
Las Vegas, NV, USA
DOI :
10.1109/IRPS.1976.362742
