Title :
Electrically Shorted Semiconductor Junctions Utilized as Programmable Read Only Memory Elements
Author_Institution :
Intersil, Inc., 10900 N. Tantau Avenue, Cupertino, CA. 95014
Abstract :
Occasionally a problem becomes a solution. In search of a reliable element to use as the electrically alterable storage element in a programmable read only memory (PROM), the well-known failure mode of the shorted semiconductor junction was studied. Since a shorted junction is easily produced and remains shorted indefinitely, it can be applied as a reliable PROM storage element. This paper describes the programming technique and summarizes over four years of reliability characterizations performed on actual PROM devices produced using this technique.
Keywords :
Aluminum; Avalanche breakdown; Electric breakdown; Logic programming; Manufacturing; PROM; Programmable logic arrays; Semiconductor diodes; Temperature sensors; Thermal resistance;
Conference_Titel :
Reliability Physics Symposium, 1976. 14th Annual
Conference_Location :
Las Vegas, NV, USA
DOI :
10.1109/IRPS.1976.362743