DocumentCode :
2606467
Title :
Electrically Shorted Semiconductor Junctions Utilized as Programmable Read Only Memory Elements
Author :
Brockhoff, W.R.
Author_Institution :
Intersil, Inc., 10900 N. Tantau Avenue, Cupertino, CA. 95014
fYear :
1976
fDate :
27851
Firstpage :
202
Lastpage :
206
Abstract :
Occasionally a problem becomes a solution. In search of a reliable element to use as the electrically alterable storage element in a programmable read only memory (PROM), the well-known failure mode of the shorted semiconductor junction was studied. Since a shorted junction is easily produced and remains shorted indefinitely, it can be applied as a reliable PROM storage element. This paper describes the programming technique and summarizes over four years of reliability characterizations performed on actual PROM devices produced using this technique.
Keywords :
Aluminum; Avalanche breakdown; Electric breakdown; Logic programming; Manufacturing; PROM; Programmable logic arrays; Semiconductor diodes; Temperature sensors; Thermal resistance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium, 1976. 14th Annual
Conference_Location :
Las Vegas, NV, USA
ISSN :
0735-0791
Type :
conf
DOI :
10.1109/IRPS.1976.362743
Filename :
4208127
Link To Document :
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