Title :
Mass Production Worthy MIM Capacitor On Gate polysilicon(MIM-COG) Structure using HfO2/HfOxCyNz/HfO2 Dielectric for Analog/RF/Mixed Signal Application
Author :
Park, Jung-Min ; Song, Min-Woo ; Kim, Weon-Hong ; Park, Pan-Kwi ; Jung, Yong-Kuk ; Kim, Ju-Youn ; Won, Seok-Jun ; Lee, Jong-Ho ; Lee, Nae-In ; Kang, Ho-Kyu
Author_Institution :
Samsung Co. Ltd., Yongin City
Abstract :
We have successfully integrated a mass production worthy MIM capacitor on gate polysilicon (MIM-COG) structure using HfO2/HfOxCyNz/HfO2(HNH) dielectric for the analog/RF/mixed signal application. The insertion of HfOxCyNz into HfO2 films can successfully suppress the crystallization. As a result, HNH film shows superior breakdown and VCC-a characteristics compared to HfO2-AI2O3 multilayer stack. In addition, we suggest novel MIM-COG structure, which can solve metal routing issues in integration of conventional MIM capacitors. Also, by utilizing the MIM COG structure, the total number of mask can be reduced. Finally, MIM-COG structure with HNH dielectric shows high capacitance density (8.3fF/um2) and low VCC-a (700 ppm/V2). Moreover, excellent operation voltage for 10 year lifetime of MIM-COG structure with HNH (4.6 V) is achieved.
Keywords :
MIM devices; analogue integrated circuits; dielectric materials; masks; mixed analogue-digital integrated circuits; radiofrequency integrated circuits; thin film capacitors; HfO2-HfOxCyNz-HfO2; MIM capacitor; analog-RF-mixed signal application; breakdown characteristics; crystallization; dielectric films; mass production; metal routing; polysilicon structure; time 10 year; voltage 4.6 V; Crystallization; Dielectrics; Electric breakdown; Hafnium oxide; MIM capacitors; Mass production; Nonhomogeneous media; RF signals; Radio frequency; Routing;
Conference_Titel :
Electron Devices Meeting, 2007. IEDM 2007. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4244-1507-6
Electronic_ISBN :
978-1-4244-1508-3
DOI :
10.1109/IEDM.2007.4419121
