Mass Production Worthy MIM Capacitor On Gate polysilicon(MIM-COG) Structure using HfO2/HfOxCyNz/HfO2 Dielectric for Analog/RF/Mixed Signal Application

We have successfully integrated a mass production worthy MIM capacitor on gate polysilicon (MIM-COG) structure using HfO₂/HfO_xC_yN_z/HfO₂(HNH) dielectric for the analog/RF/mixed signal application. The insertion of HfO_xC_yN_z into HfO₂ films can successfully suppress the crystallization. As a result, HNH film shows superior breakdown and VCC-a characteristics compared to HfO₂-AI₂O₃ multilayer stack. In addition, we suggest novel MIM-COG structure, which can solve metal routing issues in integration of conventional MIM capacitors. Also, by utilizing the MIM COG structure, the total number of mask can be reduced. Finally, MIM-COG structure with HNH dielectric shows high capacitance density (8.3fF/um²) and low VCC-a (700 ppm/V²). Moreover, excellent operation voltage for 10 year lifetime of MIM-COG structure with HNH (4.6 V) is achieved.