DocumentCode
2606483
Title
Toward next high performances MIM generation: up to 30fF/μm2 with 3D architecture and high-κ materials
Author
Jeannot, S. ; Bajolet, A. ; Manceau, J.-P. ; Crémer, S. ; Deloffre, E. ; Oddou, J.-P. ; Perrot, C. ; Benoit, D. ; Richard, C. ; Bouillon, P. ; Bruyère, S.
Author_Institution
STMicroelectronics, Crolles
fYear
2007
fDate
10-12 Dec. 2007
Firstpage
997
Lastpage
1000
Abstract
This paper deals with the realization of new high performances metal-insulator-metal (MIM) capacitors. Using PEALD deposited HfO2, ZrO2, A12O3 and their combination with Ta2O5, MIM stacks have been realized. By controlling high-κ deposition characteristics and dielectric stack architecture, state of the art electrical results for high performances analog design (weak non- linearity and sustaining high operating bias) are obtained. The use of 3D architecture allows combining such characteristics with very high capacitance density. A first realization with Ta2O5 leads to 30fF/mum2 and demonstrates the interest of such an approach for next generation high performances MIM capacitors.
Keywords
MIM devices; aluminium compounds; analogue integrated circuits; hafnium compounds; high-k dielectric thin films; plasma deposition; tantalum compounds; thin film capacitors; zirconium compounds; 3D architecture; Al2O3; HfO2; MIM capacitors; MIM stacks; PEALD; Ta2O3; ZrO2; dielectric stack architecture; high performance analog design; high-k deposition characteristics; metal-insulator-metal capacitors; Analog integrated circuits; Capacitance; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Leakage current; MIM capacitors; Metal-insulator structures; Photonic band gap; Radiofrequency integrated circuits;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2007. IEDM 2007. IEEE International
Conference_Location
Washington, DC
Print_ISBN
978-1-4244-1507-6
Electronic_ISBN
978-1-4244-1508-3
Type
conf
DOI
10.1109/IEDM.2007.4419122
Filename
4419122
Link To Document