Title :
A 0.5 μm pixel frame-transfer CCD image sensor in 110 nm CMOS
Author :
Fife, Keith ; Gamal, Abbas El ; Wong, H. S Philip
Author_Institution :
Stanford Univ., Stanford
Abstract :
The first image sensor with submicron pixel pitch is reported. Test structures comprising 16 x 16 pixel full-frame-transfer (FFT) CCDs with 0.5 μm pixels are fabricated in a single-poly 110 nm CMOS process. Characterization results demonstrate charge transfer efficiency of 99.9%, QE of 48% at 550 nm, conversion gain of 193 μ V/e-, well capacity of 3550 e-, dark current of 50 e-/sec with nonuniformity of 25%, peak SNR of 28 dB and dynamic range of 60 dB. These performance metrics are within the range of consumer image sensors and suggest that further reduction in pixel size is feasible.
Keywords :
CCD image sensors; CMOS image sensors; optical testing; semiconductor device measurement; semiconductor device testing; SNR; charge transfer efficiency; conversion gain; dark current; pixel size reduction; quantum effieciency; single-poly CMOS process; size 110 nm; submicron pixel pitch frame-transfer CCD image sensor; test structures; wavelength 550 nm; CMOS image sensors; CMOS process; Charge transfer; Charge-coupled image sensors; Dark current; Dynamic range; Image converters; Image sensors; Pixel; Testing;
Conference_Titel :
Electron Devices Meeting, 2007. IEDM 2007. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4244-1507-6
Electronic_ISBN :
978-1-4244-1508-3
DOI :
10.1109/IEDM.2007.4419124
