A 0.5 μm pixel frame-transfer CCD image sensor in 110 nm CMOS

Author

Fife, Keith ; Gamal, Abbas El ; Wong, H. S Philip

Author_Institution

Stanford Univ., Stanford

fYear

2007

fDate

10-12 Dec. 2007

Firstpage

1003

Lastpage

1006

Abstract

The first image sensor with submicron pixel pitch is reported. Test structures comprising 16 x 16 pixel full-frame-transfer (FFT) CCDs with 0.5 μm pixels are fabricated in a single-poly 110 nm CMOS process. Characterization results demonstrate charge transfer efficiency of 99.9%, QE of 48% at 550 nm, conversion gain of 193 μ V/e-, well capacity of 3550 e-, dark current of 50 e-/sec with nonuniformity of 25%, peak SNR of 28 dB and dynamic range of 60 dB. These performance metrics are within the range of consumer image sensors and suggest that further reduction in pixel size is feasible.

Keywords

CCD image sensors; CMOS image sensors; optical testing; semiconductor device measurement; semiconductor device testing; SNR; charge transfer efficiency; conversion gain; dark current; pixel size reduction; quantum effieciency; single-poly CMOS process; size 110 nm; submicron pixel pitch frame-transfer CCD image sensor; test structures; wavelength 550 nm; CMOS image sensors; CMOS process; Charge transfer; Charge-coupled image sensors; Dark current; Dynamic range; Image converters; Image sensors; Pixel; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2007. IEDM 2007. IEEE International

Conference_Location

Washington, DC

Print_ISBN

978-1-4244-1507-6

Electronic_ISBN

978-1-4244-1508-3

Type

conf

DOI

10.1109/IEDM.2007.4419124

Filename

4419124