Title :
Three dimensional stacked modules using silicon carrier
Author :
Kripesh, V. ; Ganesh, V.P. ; Yoon, Seung Wook ; Sharma, Rajnish Kumar ; Mohanraj, Sudhir ; Iyer, Mahadeven
Author_Institution :
Inst. of Microelectron., Singapore, Singapore
Abstract :
In this research paper, a novel method of fabricating 3D-stacked modules using a silicon carrier that can integrate known good dice, with testable features and integrated cooling solution is presented. The backbone of this silicon based system in package (SiP) is the fabrication of silicon carriers with through hole conductive interconnects. Process development, issues and limitations of the novel method to fabricate silicon carriers with solder and Cu conductive interconnects are discussed in detail. Through holes in silicon wafer have been demonstrated with conventional low cost batch processing wet etch and high aspect ratio DRIE methods to address coarse pitch and fine pitch applications respectively. Ultra thin flip chip device with daisy chain are fabricated and are attached to the silicon carriers by conventional flip chip processes, forming a stack. Individual stacks are vertically integrated to form three dimensional stacked modules. A complete three dimensional stacked module has been fabricated with three individual stacks. The fabricated stack modules have been subjected to JEDEC reliability tests and the results are discussed.
Keywords :
batch processing (industrial); cooling; copper; elemental semiconductors; etching; fine-pitch technology; flip-chip devices; integrated circuit interconnections; integrated circuit packaging; multichip modules; plasma materials processing; silicon; soldering; sputter etching; standards; 3D stacked modules; Cu; Cu conductive interconnect; JEDEC reliability tests; Si; SiP; batch processing wet etch; coarse pitch applications; daisy chain; fine pitch applications; flip chip processes; high aspect ratio DRIE; integrated cooling; known good dice; silicon based system in package; silicon carrier; silicon wafer; solder conductive interconnect; testable features; through hole conductive interconnect; ultra thin flip chip device; vertically integrated stacks; Cooling; Costs; Fabrication; Flip chip; Packaging; Silicon; Space technology; Stacking; Testing; Wet etching;
Conference_Titel :
Electronics Packaging Technology, 2003 5th Conference (EPTC 2003)
Print_ISBN :
0-7803-8205-6
DOI :
10.1109/EPTC.2003.1271484