Growth, Structural and Optical Properties of III-V Nanowires for Optoelectronic Applications

Author

Joyce, Hannah J. ; Gao, Qiang ; Kim, Yong ; Tan, H. Hoe ; Jagadish, Chennupati

Author_Institution

Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT

fYear

2007

fDate

2-5 Aug. 2007

Firstpage

866

Lastpage

869

Abstract

We investigate the growth of III-V nanowires by MOCVD and the structural and optical properties of these nanowires. Binary and ternary nanowires of GaAs, InAs, InP, AlGaAs and InGaAs are achieved. We discuss the nucleation and growth issues involved in fabricating high quality nanowires suitable for device applications. We have fabricated and characterised a variety of axial and radial heterostructures including GaAs/InGaAs superlattices, and GaAs/AlGaAs core- shell and core-multishell nanowires.

Keywords

III-V semiconductors; MOCVD; aluminium compounds; gallium arsenide; indium compounds; nanowires; nucleation; semiconductor growth; semiconductor heterojunctions; semiconductor quantum wires; semiconductor superlattices; GaAs-AlGaAs; GaAs-InGaAs; III-V nanowire growth; InAs; InP; MOCVD; core-multishell nanowires; heterostructures; nucleation; optoelectronic applications; superlattices; Biomedical optical imaging; Gallium arsenide; Gold; III-V semiconductor materials; Indium gallium arsenide; Indium phosphide; MOCVD; Nanowires; Optical superlattices; Substrates; GaAs; InP; MOCVD; heterostructure; nanowire; photoluminescence;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology, 2007. IEEE-NANO 2007. 7th IEEE Conference on

Conference_Location

Hong Kong

Print_ISBN

978-1-4244-0607-4

Electronic_ISBN

978-1-4244-0608-1

Type

conf

DOI

10.1109/NANO.2007.4601321

Filename

4601321