• DocumentCode
    2606591
  • Title

    An Improved Approach to Locating Pinhole Defects in MOS and Bipolar Integrated Circuits Using Liquid Crystals

  • Author

    Salvo, Carmine J.

  • Author_Institution
    Rome Air Development Center, Reliability & Compatibility Division, Reliability Branch, Griffiss AFE NY 13441
  • fYear
    1976
  • fDate
    27851
  • Firstpage
    263
  • Lastpage
    274
  • Abstract
    Routine failure analysis of dielectric defects using nematic liquid crystals is possible with the method described in this paper. The refinements on previously described implementations result in excellent definition of the pinhole site. The paper discusses the principle involved in liquid crystal pinhole detection and details a practical liquid crystal fixture and device preparation. The influence of cell voltage polarity is illustrated and shown to be an important factor in achieving satisfactory results. The effectiveness of using dark field illumination and polarized light is shown and compared with the conventional bright field illumination used by prior authors. CMOS, MOS capacitor, and bipolar device analyses are included. Results are presented in sufficient detail to allow the reader to easily implement the technique in his own laboratory.
  • Keywords
    Bipolar integrated circuits; Dielectric liquids; Failure analysis; Fixtures; Lighting; Liquid crystal devices; Liquid crystals; MOS capacitors; Optical polarization; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 1976. 14th Annual
  • Conference_Location
    Las Vegas, NV, USA
  • ISSN
    0735-0791
  • Type

    conf

  • DOI
    10.1109/IRPS.1976.362752
  • Filename
    4208136