DocumentCode
2606591
Title
An Improved Approach to Locating Pinhole Defects in MOS and Bipolar Integrated Circuits Using Liquid Crystals
Author
Salvo, Carmine J.
Author_Institution
Rome Air Development Center, Reliability & Compatibility Division, Reliability Branch, Griffiss AFE NY 13441
fYear
1976
fDate
27851
Firstpage
263
Lastpage
274
Abstract
Routine failure analysis of dielectric defects using nematic liquid crystals is possible with the method described in this paper. The refinements on previously described implementations result in excellent definition of the pinhole site. The paper discusses the principle involved in liquid crystal pinhole detection and details a practical liquid crystal fixture and device preparation. The influence of cell voltage polarity is illustrated and shown to be an important factor in achieving satisfactory results. The effectiveness of using dark field illumination and polarized light is shown and compared with the conventional bright field illumination used by prior authors. CMOS, MOS capacitor, and bipolar device analyses are included. Results are presented in sufficient detail to allow the reader to easily implement the technique in his own laboratory.
Keywords
Bipolar integrated circuits; Dielectric liquids; Failure analysis; Fixtures; Lighting; Liquid crystal devices; Liquid crystals; MOS capacitors; Optical polarization; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1976. 14th Annual
Conference_Location
Las Vegas, NV, USA
ISSN
0735-0791
Type
conf
DOI
10.1109/IRPS.1976.362752
Filename
4208136
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