Title :
A fresh look at majority multiplexing when devices get into the picture
Author :
Beiu, Valeriu ; Ibrahim, Walid ; Molnar, Sanja Lazarova
Author_Institution :
Coll. of Inf. Technol., United Arab Emirates Univ., Al Ain
Abstract :
In this paper we present the first detailed analysis of von Neumann multiplexing (vN-MUX) using majority (MAJ) gates of small fan-ins Delta (MAJ-Delta) with respect to the probability of failure of the elementary (nano-)devices. Only gates with small fan-ins have been considered, as gates with large fan-ins do not seem practical (at least in the short term) in future technologies. The extensions from an exact counting algorithm (for gate defects and faults only) to device-level failures will allow us to estimate and characterize MAJ-Delta vN-MUX with respect to device-level malfunctions. The reported results depart significantly from all known gate-level analyses-either theoretical or based on simulations. These should be quite important as providing a detailed picture of the behavior of MAJ-Delta vN-MUX when considering the (unreliability of the elementary) (nano-)devices (as opposed to gate-level only analyses). The main conclusion is that small fan-in gates (and redundancy schemes relying on such gates) are quite promising-in spite of all previous results at gate-level showing the contrary.
Keywords :
failure analysis; logic gates; logic testing; probability; redundancy; device-level failures; device-level malfunctions; elementary nanodevices; failure probability; gate defects; gate-level analysis; majority gates; majority multiplexing; nanoarchitectures; redundancy schemes; small fan-ins; von Neumann multiplexing; CMOS technology; Circuit faults; Educational institutions; Failure analysis; Fault tolerance; Information technology; Integrated circuit technology; Nanoscale devices; Nanotechnology; Space technology; Majority gates; multiplexing; nano-architectures; nano-devices; reliability;
Conference_Titel :
Nanotechnology, 2007. IEEE-NANO 2007. 7th IEEE Conference on
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-0607-4
Electronic_ISBN :
978-1-4244-0608-1
DOI :
10.1109/NANO.2007.4601325