Title :
Potentiality of Silicon Optical Modulator Based on Free-Carrier Absorption
Author :
Tabei, Tetsuo ; Hirata, Tomoki ; Kajikawa, Kenta ; Sunami, Hideo
Author_Institution :
Hiroshima Univ., Hiroshima
Abstract :
Light propagation in metal-oxide-semiconductor (MOS) optical modulator based on free-carrier absorption is analyzed theoretically and compared with experimental results. The coincidence is sufficient enough to confirm validity of the simulation. However, practical use of the modulator is limited since extinction ratio is still small due to weak interaction between light and inversion carrier at around 1.55 mum light.
Keywords :
MIS devices; absorption; light propagation; optical modulation; free-carrier absorption; light propagation; metal-oxide-semiconductor optical modulator; silicon optical modulator; Absorption; Dielectric substrates; Electrons; Impurities; MOS capacitors; Neodymium; Optical modulation; Optical propagation; Silicon; Voltage;
Conference_Titel :
Electron Devices Meeting, 2007. IEDM 2007. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4244-1507-6
Electronic_ISBN :
978-1-4244-1508-3
DOI :
10.1109/IEDM.2007.4419129
