Title :
A rigorous surface-potential-based I-V model for undoped cylindrical nanowire MOSFETs
Author :
Lin, S.H. ; Zhou, X. ; See, G.H. ; Zhu, Z.M. ; Lim, G.H. ; Wei, C.Q. ; Zhu, G.J. ; Yao, Z.H. ; Wang, X.F. ; Yee, M. ; Zhao, L.N. ; Hou, Z.F. ; Ang, L.K. ; Lee, T.S. ; Chandra, W.
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore
Abstract :
A non-charge-sheet surface-potential-based compact drain-current model for long-channel undoped gate-all-around (GAA) silicon-nanowire (SiNW) MOSFETs is developed. The surface-potential equation is derived from cylindrical Poisson equation for undoped silicon and solved iteratively with a very good initial guess to reach equation residue below 10-16 V within a few iterations. The single-piece current equation is derived and validated with numerical simulations for all operation regions without any fitting parameters. The results show that the proposed model can be used for bench-marking long-channel SiNW models, and demonstrate a first step towards a practical SiNW model for inclusion of various short-channel and quantum-mechanical effects.
Keywords :
MOSFET; Poisson equation; elemental semiconductors; nanowires; silicon; cylindrical Poisson equation; drain-current model; quantum-mechanical effects; surface-potential-based I-V model; undoped cylindrical nanowire MOSFET; Boundary conditions; CMOS technology; Electrostatics; MOSFETs; Nanotechnology; Numerical simulation; Poisson equations; Semiconductor device modeling; Silicon; Surface fitting; MOSFET; compact model; gate-all-around (GAA); silicon nanowire (SiNW); surface potential;
Conference_Titel :
Nanotechnology, 2007. IEEE-NANO 2007. 7th IEEE Conference on
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-0607-4
Electronic_ISBN :
978-1-4244-0608-1
DOI :
10.1109/NANO.2007.4601326
