Performance and reliability analysis of a scaled multi-switch junction crossbar nanomemory and demultiplexer

This paper presents a performance and reliability analysis of a scaled crossbar molecular switch memory and demultiplexer. In particular, we compare our multi-switch junction fault tolerance scheme with a banking defect tolerance scheme. Results indicate that delay and power scale linearly increasing number of redundant molecular switch junctions. The multi-switch junction scheme was also shown to achieve greater than 99% reliability for molecular switch junction failures rates less than 20%, when a redundancy of at least 3 was implemented. In contrast, the banking scheme was only effective for molecular switch junction failure rates of less 1%, which requires over three times the number of banking modules.