DocumentCode
2606665
Title
Surface Analysis by ISS and SIMS
Author
Smith, D.P.
Author_Institution
3M Company, St. Paul, Minneosta
fYear
1976
fDate
27851
Firstpage
295
Lastpage
295
Abstract
Two surface analysis techniques utilizing ion beams, Ion Scattering Spectrometry (ISS) and Secondary Ion Mass Spectrometry (SIMS) will be discussed. These techniques use a low-energy (1-5 keV) noble gas ion beam to determine elemental and chemical surface analysis of a wide variety of materials. Both ISS and SIMS are sensitive to the first monolayer of atoms. This, combined with charge neutralization to prevent beam wander, surface electric fields, etc., provide for composition depth profiles with monolayer resolution on such materials as glasses, semi- conductors, and polymeric coatings.1 The use of recently developed ion guns to generate high-bright-ness, small-diameter ion beams allows imaging ISS and SIMS analysis for applications requiring high spatial resolution. Principles of the technique as well as several illustrative examples of ISS and SIMS surface analysis will be presented.
Keywords
Atomic layer deposition; Atomic measurements; Chemical analysis; Chemical elements; Conducting materials; Image resolution; Ion beams; Mass spectroscopy; Scattering; Spatial resolution;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1976. 14th Annual
Conference_Location
Las Vegas, NV, USA
ISSN
0735-0791
Type
conf
DOI
10.1109/IRPS.1976.362756
Filename
4208140
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