DocumentCode :
2606665
Title :
Surface Analysis by ISS and SIMS
Author :
Smith, D.P.
Author_Institution :
3M Company, St. Paul, Minneosta
fYear :
1976
fDate :
27851
Firstpage :
295
Lastpage :
295
Abstract :
Two surface analysis techniques utilizing ion beams, Ion Scattering Spectrometry (ISS) and Secondary Ion Mass Spectrometry (SIMS) will be discussed. These techniques use a low-energy (1-5 keV) noble gas ion beam to determine elemental and chemical surface analysis of a wide variety of materials. Both ISS and SIMS are sensitive to the first monolayer of atoms. This, combined with charge neutralization to prevent beam wander, surface electric fields, etc., provide for composition depth profiles with monolayer resolution on such materials as glasses, semi- conductors, and polymeric coatings.1 The use of recently developed ion guns to generate high-bright-ness, small-diameter ion beams allows imaging ISS and SIMS analysis for applications requiring high spatial resolution. Principles of the technique as well as several illustrative examples of ISS and SIMS surface analysis will be presented.
Keywords :
Atomic layer deposition; Atomic measurements; Chemical analysis; Chemical elements; Conducting materials; Image resolution; Ion beams; Mass spectroscopy; Scattering; Spatial resolution;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium, 1976. 14th Annual
Conference_Location :
Las Vegas, NV, USA
ISSN :
0735-0791
Type :
conf
DOI :
10.1109/IRPS.1976.362756
Filename :
4208140
Link To Document :
بازگشت