• DocumentCode
    2606665
  • Title

    Surface Analysis by ISS and SIMS

  • Author

    Smith, D.P.

  • Author_Institution
    3M Company, St. Paul, Minneosta
  • fYear
    1976
  • fDate
    27851
  • Firstpage
    295
  • Lastpage
    295
  • Abstract
    Two surface analysis techniques utilizing ion beams, Ion Scattering Spectrometry (ISS) and Secondary Ion Mass Spectrometry (SIMS) will be discussed. These techniques use a low-energy (1-5 keV) noble gas ion beam to determine elemental and chemical surface analysis of a wide variety of materials. Both ISS and SIMS are sensitive to the first monolayer of atoms. This, combined with charge neutralization to prevent beam wander, surface electric fields, etc., provide for composition depth profiles with monolayer resolution on such materials as glasses, semi- conductors, and polymeric coatings.1 The use of recently developed ion guns to generate high-bright-ness, small-diameter ion beams allows imaging ISS and SIMS analysis for applications requiring high spatial resolution. Principles of the technique as well as several illustrative examples of ISS and SIMS surface analysis will be presented.
  • Keywords
    Atomic layer deposition; Atomic measurements; Chemical analysis; Chemical elements; Conducting materials; Image resolution; Ion beams; Mass spectroscopy; Scattering; Spatial resolution;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 1976. 14th Annual
  • Conference_Location
    Las Vegas, NV, USA
  • ISSN
    0735-0791
  • Type

    conf

  • DOI
    10.1109/IRPS.1976.362756
  • Filename
    4208140