• DocumentCode
    2606759
  • Title

    Hot Electron Injection Efficiency in IGFET Structures

  • Author

    Euzent, Bruce

  • Author_Institution
    Intel Corporation, 3065 Bowers Avenue, Santa Clara, CA 95051. (408) 246-7501
  • fYear
    1977
  • fDate
    28216
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    A model is presented for predicting hot electron induced threshold shifts in N-channel Insulating Gate Field Effect Transistors (IGFET). Indirect measurements of electron injection currents are used to predict their dependence upon transistor parameters. These results are compared to long term stress tests on single transistors and large scale integrated circuits.
  • Keywords
    Circuit testing; Current measurement; FETs; Insulation; Integrated circuit measurements; Integrated circuit testing; Large scale integration; Predictive models; Secondary generated hot electron injection; Stress;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 1977. 15th Annual
  • Conference_Location
    LAs Vegas, NV, USA
  • ISSN
    0735-0791
  • Type

    conf

  • DOI
    10.1109/IRPS.1977.362763
  • Filename
    4208150
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2606759