Title :
Hot Electron Injection Efficiency in IGFET Structures
Author_Institution :
Intel Corporation, 3065 Bowers Avenue, Santa Clara, CA 95051. (408) 246-7501
Abstract :
A model is presented for predicting hot electron induced threshold shifts in N-channel Insulating Gate Field Effect Transistors (IGFET). Indirect measurements of electron injection currents are used to predict their dependence upon transistor parameters. These results are compared to long term stress tests on single transistors and large scale integrated circuits.
Keywords :
Circuit testing; Current measurement; FETs; Insulation; Integrated circuit measurements; Integrated circuit testing; Large scale integration; Predictive models; Secondary generated hot electron injection; Stress;
Conference_Titel :
Reliability Physics Symposium, 1977. 15th Annual
Conference_Location :
LAs Vegas, NV, USA
DOI :
10.1109/IRPS.1977.362763
