DocumentCode :
2606806
Title :
Spin polarization of electron current in semimagnetic semiconductor nanostructures
Author :
Beletskii, N.N. ; Borysenko, S.A.
Author_Institution :
Usikov lnstitute of Radiophysics and Electronics of the National Academy of Sciences of Ukraine
fYear :
2004
fDate :
14-17 Sept. 2004
Firstpage :
536
Lastpage :
538
Abstract :
The influence of an external constant magnetic field ou the voltage-current characteristics and spin polarization coeffrcient of the electron current in a double-harrier resonant-tunneling nanostructures composed of semimagnetic semiconductor layers has beeu investigated.
Keywords :
Electrons; Magnetic fields; Magnetic resonance; Magnetic semiconductors; Magnetoelectronics; Polarization; Resonant tunneling devices; Semiconductor nanostructures; Temperature; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Mathematical Methods in Electromagnetic Theory, 2004. 10th International Conference on
Conference_Location :
Dniepropetrovsk, Ukraine
Print_ISBN :
0-7803-8441-5
Type :
conf
DOI :
10.1109/MMET.2004.1397110
Filename :
1397110
Link To Document :
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