Title :
Hot Electron Reliability Effects in Lateral PNP Transistors
Author :
Bergeron, D.L. ; Putney, Z.C. ; Smith, P.H. ; Stephens, G.B.
Author_Institution :
IBM Corporation, Manassas, Virginia 22110. 703-367-2121
Abstract :
A failure mechanism of bipolar lateral PNP transistors in medium voltage integrated circuits has been observed. The failure mechanism is characterized by inversion layer conduction between emitter and collector of the devices resulting from the trapping of hot electrons in the dielectric. A model of the mechanism has been developed which explains the observed temperature and voltage acceleration.
Keywords :
Acceleration; Bipolar integrated circuits; Bipolar transistor circuits; Dielectric devices; Electron emission; Electron traps; Failure analysis; Integrated circuit reliability; Medium voltage; Temperature;
Conference_Titel :
Reliability Physics Symposium, 1977. 15th Annual
Conference_Location :
LAs Vegas, NV, USA
DOI :
10.1109/IRPS.1977.362765
