Title :
Hot Carrier Injection in the Dual Polysilicon Gate Structure and Its Related Reliability Effects on Dynamic RAM Refresh Time
Author :
Malwah, M.L. ; Edwards, J.R. ; Bandali, M.
Author_Institution :
American Microsystems, Inc., 3800 Homestead Road, Santa Clara, CA 95051. (408) 246-0330
Abstract :
As the MOS technology goes toward increased density for dynamic RAM´s, the use of two layers of polysilicon in a dual gate structure for the dynamic RAM cell appears to be the direction of new technologies. This paper describes a reliability problem which is caused by injection of hot carriers into the storage gate of a dual polysilicon (split gate) dynamic RAM cell. The failure mode and the physical model are discussed in detail.
Keywords :
Circuits; DRAM chips; Electrons; Hot carrier injection; Hot carriers; Insulation; MOS capacitors; Read-write memory; Silicon; Voltage;
Conference_Titel :
Reliability Physics Symposium, 1977. 15th Annual
Conference_Location :
LAs Vegas, NV, USA
DOI :
10.1109/IRPS.1977.362767
