• DocumentCode
    2606836
  • Title

    Hot Carrier Injection in the Dual Polysilicon Gate Structure and Its Related Reliability Effects on Dynamic RAM Refresh Time

  • Author

    Malwah, M.L. ; Edwards, J.R. ; Bandali, M.

  • Author_Institution
    American Microsystems, Inc., 3800 Homestead Road, Santa Clara, CA 95051. (408) 246-0330
  • fYear
    1977
  • fDate
    28216
  • Firstpage
    23
  • Lastpage
    26
  • Abstract
    As the MOS technology goes toward increased density for dynamic RAM´s, the use of two layers of polysilicon in a dual gate structure for the dynamic RAM cell appears to be the direction of new technologies. This paper describes a reliability problem which is caused by injection of hot carriers into the storage gate of a dual polysilicon (split gate) dynamic RAM cell. The failure mode and the physical model are discussed in detail.
  • Keywords
    Circuits; DRAM chips; Electrons; Hot carrier injection; Hot carriers; Insulation; MOS capacitors; Read-write memory; Silicon; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 1977. 15th Annual
  • Conference_Location
    LAs Vegas, NV, USA
  • ISSN
    0735-0791
  • Type

    conf

  • DOI
    10.1109/IRPS.1977.362767
  • Filename
    4208154
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2606836