DocumentCode :
2606850
Title :
Soft Failure Modes in MOS RAMS
Author :
Sie, C.H. ; Youngblood, R.A. ; Liao, J.H. ; Turk, A.
Author_Institution :
Xerox Corporation, El Segundo, California 90245. 213-679-4511 X1327
fYear :
1977
fDate :
28216
Firstpage :
27
Lastpage :
32
Keywords :
DRAM chips; Error correction; Gaussian distribution; Integrated circuit noise; Microcomputers; Random access memory; Read-write memory; Stress; Temperature; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium, 1977. 15th Annual
Conference_Location :
LAs Vegas, NV, USA
ISSN :
0735-0791
Type :
conf
DOI :
10.1109/IRPS.1977.362768
Filename :
4208155
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2606850
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