DocumentCode
2606943
Title
Theoretical study on the selective emitter radioisotope micro battery
Author
Piao, Xianggao ; Chu, Jinkui ; Wang, Peichao ; Jian, Limin
Author_Institution
Key Lab. for precision & Non-traditional Machining Technol. of Minist. of Educ., Dalian Univ. of Technol., Dalian
fYear
2007
fDate
2-5 Aug. 2007
Firstpage
965
Lastpage
968
Abstract
Radioisotope micro battery has the capability of meet the requirements of micropower. This paper investigated the two distinct parts and the structure characteristics of the selective emitter radioisotope micro battery. Compared with the conventional Back Surface Filed radioisotope micro battery, the selective emitter radioisotope micro battery has two distinct parts: (1) a deeply diffused region with high surface doping concentration under the metal contacts and the adjacent region; (2) a surface passivated, shallow diffused region with a relatively low surface doping concentration in active region. Thus formed a lateral n+-n junction between the heavily diffused region and the shallow diffused region, a n+-p junction under the metal contacts, and a p-n junction at the other regions as the same as the conventional Back Surface Field radioisotope micro battery. Therefore, compared with the conventional Back Surface Field radioisotope micro battery, the selective emitter radioisotope micro battery has a lot of advantages: (1) improve the collection efficiency of the electron hole pairs; (2) improve the output voltage of the radioisotope micro battery; (3) reduce the series resistance of the radioisotope micro battery; (4) reduce the surface recombination rate of the electron hole pairs; (5) reduce the effect of the diffusion dead layer, thus improve the overall performance of the diffusion layer. In conclusion, the selective emitter structure is proved to be one of the effective ways to improve the conversion efficiency of radioisotope micro battery in the course of deeply analyzing on its advantages.
Keywords
doping; p-n junctions; radioisotopes; secondary cells; surface recombination; electron hole pairs; metal contacts; p-n junction; radioisotope microbattery; selective emitter structure; series resistance; surface doping concentration; surface recombination rate; Batteries; Charge carrier processes; Doping; Educational technology; Electron emission; Laboratories; P-n junctions; Radioactive materials; Surface resistance; Voltage; advantages; micro battery; radioisotope; selective emitter; theoritical study;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanotechnology, 2007. IEEE-NANO 2007. 7th IEEE Conference on
Conference_Location
Hong Kong
Print_ISBN
978-1-4244-0607-4
Electronic_ISBN
978-1-4244-0608-1
Type
conf
DOI
10.1109/NANO.2007.4601344
Filename
4601344
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