Title :
Overlay metrology for next generation lithography at CMS
Author :
Ku, Y.S. ; Tai, H.M. ; Chang, Calvin C.
Author_Institution :
Center for Meas. Stand., Ind. Technol. Res. Inst., Hsinchu
Abstract :
The center for measurement standards (CMS) has a research program in optical overlay metrology. The main goal of this work is to improve overlay measurement accuracy. Two main threads are developed to the work - novel in-chip overlay target design, and best algorithm. The former is hoped to prove a capability for measuring overlay error inside the active area of product devices. The later is for extracting the most from image detail.
Keywords :
coatings; measurement standards; nanolithography; CMS; Center for Measurement Standards; best algorithm; in-chip overlay target design; lithography; optical overlay metrology; overlay measurement accuracy; Area measurement; Circuit testing; Collision mitigation; Lithography; Measurement standards; Metrology; Nanotechnology; Optical films; Semiconductor device measurement; Yarn; bar-in-bar; in-chip; optical metrology; overlay; overlay mark;
Conference_Titel :
Nanotechnology, 2007. IEEE-NANO 2007. 7th IEEE Conference on
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-0607-4
Electronic_ISBN :
978-1-4244-0608-1
DOI :
10.1109/NANO.2007.4601351
