DocumentCode :
2607055
Title :
Engineering wafers for the nanotechnology era
Author :
Mazuré, Carlos ; Auberton-Hervé, André-Jacques
Author_Institution :
SOITEC, Crolles, France
fYear :
2005
fDate :
12-16 Sept. 2005
Firstpage :
29
Lastpage :
38
Abstract :
Nanotechnology starts at the substrate level. Engineered substrates are one of the most important innovations of the nanotechnology era driven by the vanishing boundary between substrate design and device architecture. SOI substrates, the first engineered substrate of its kind, have made possible an efficient optimization of MOSFET current drive while minimizing the leakage and reducing parasitic elements, thus enhancing the overall IC performance. Strained silicon, hybrid orientation SOI, and germanium on insulator have all added new handles to traditional scaling to further improve device and IC performance. An overview of the advances in Smart Cut engineered substrates and the impact on device performance is given.
Keywords :
MOSFET; elemental semiconductors; germanium; nanotechnology; semiconductor-insulator boundaries; silicon; silicon-on-insulator; substrates; system-on-chip; MOSFET current drive optimization; SOI substrates; Smart Cut substrates; device architecture; germanium on insulator; hybrid orientation SOI; leakage minimization; nanotechnology; parasitic element reduction; strained silicon; substrate design; Capacitive sensors; FinFETs; Impedance; Logic devices; MOSFET circuits; Nanotechnology; Power engineering and energy; Radio frequency; Silicon on insulator technology; Technological innovation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 2005. ESSDERC 2005. Proceedings of 35th European
Print_ISBN :
0-7803-9203-5
Type :
conf
DOI :
10.1109/ESSDER.2005.1546579
Filename :
1546579
Link To Document :
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