Title :
Voltage Breakdown Characteristics of Close Spaced Aluminum Arc Gap Structures on Oxidized Silicon
Author :
Hickernell, F.S. ; Crawford, J.J.
Author_Institution :
Motorola Government Electronics Division, Scottsdale, Arizona 85252
Abstract :
The pulsed dc voltage breakdown characteristics of passivated and unpassivated parallel planar aluminum arc gap structures on oxidized silicon, with metal to metal spacings from 0.1 to 1.6 mils, were investigated. The arc breakdown and oxide rupture voltage dependencies, characteristics of breakdown, nonproductive failure modes and applicability for MOS-LSI circuit protection were investigated. Unpassivated arc structures with gap spacings from 0.4 to 1.6 mils, having breakdown voltages in the 225 volt region, would be recommended for protection of MOS-LSI circuits.
Keywords :
Aluminum; Breakdown voltage; Circuits; Dielectric breakdown; Electric breakdown; Electrodes; Passivation; Protection; Silicon; Testing;
Conference_Titel :
Reliability Physics Symposium, 1977. 15th Annual
Conference_Location :
LAs Vegas, NV, USA
DOI :
10.1109/IRPS.1977.362783
