DocumentCode :
2607113
Title :
Analog/RF circuit design techniques for nanometerscale IC technologies
Author :
Nauta, Bram ; Annema, Anne-Johan
Author_Institution :
MESA+ Res. Inst., Twente Univ., Enschede, Netherlands
fYear :
2005
fDate :
12-16 Sept. 2005
Firstpage :
45
Lastpage :
53
Abstract :
CMOS evolution introduces several problems in analog design. Gate-leakage mismatch exceeds conventional matching tolerances requiring active cancellation techniques or alternative architectures. One strategy to deal with the use of lower supply voltages is to operate critical parts at higher supply voltages, by exploiting combinations of thin- and thick-oxide transistors. Alternatively low voltage circuit techniques are successfully developed, in order to benefit from nanometer scale CMOS technology, more functionality is shifted to the digital domain, including parts of the RF circuits. At the same time, analog control for digital and digital control for analog emerges to deal with current and upcoming imperfections.
Keywords :
CMOS analogue integrated circuits; integrated circuit design; low-power electronics; nanoelectronics; radiofrequency integrated circuits; CMOS evolution; RF circuit design; alternative architecture; analog circuit design; analog control; cancellation technique; digital control; digital domain; gate-leakage mismatch; higher supply voltages; lower supply voltages; matching tolerance; nanometerscale IC technology; thick-oxide transistors; thin-oxide transistors; Analog integrated circuits; CMOS analog integrated circuits; CMOS digital integrated circuits; CMOS technology; Circuit synthesis; Costs; Intelligent sensors; Radio frequency; Radiofrequency integrated circuits; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 2005. ESSDERC 2005. Proceedings of 35th European
Print_ISBN :
0-7803-9203-5
Type :
conf
DOI :
10.1109/ESSDER.2005.1546581
Filename :
1546581
Link To Document :
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