DocumentCode :
2607127
Title :
Effects of Electrostatic Discharge on Linear Bipolar Integrated Circuits
Author :
Minear, R.L. ; Dodson, G.A.
Author_Institution :
Bell Telephone Laboratories, Reading, Pennsylvania 19604, (215) 929-7575. (215) 929-7385
fYear :
1977
fDate :
28216
Firstpage :
138
Lastpage :
143
Abstract :
Electrostatic discharge (ESD) can easily damage bipolar integrated circuits. "Second breakdown" of NPN transistor emitter-base Junctions is a common failure mode. No external emitter connection is needed for this to occur. ESD current paths, physics of ESD failure, and design concepts for improved ESD resistance are discussed.
Keywords :
Biological system modeling; Bipolar integrated circuits; Capacitors; Circuit simulation; Degradation; Electric breakdown; Electrostatic discharge; Lead; Pulse measurements; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium, 1977. 15th Annual
Conference_Location :
LAs Vegas, NV, USA
ISSN :
0735-0791
Type :
conf
DOI :
10.1109/IRPS.1977.362785
Filename :
4208172
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2607127
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