DocumentCode :
2607183
Title :
Development of wafer level underfill material and process
Author :
Zhang, Zhuqing ; Sun, Yangyang ; Fan, Lianhua ; Doraiswami, Ravi ; Wong, C.P.
Author_Institution :
Sch. of Mater. Sci. & Eng., Georgia Inst. of Technol., Atlanta, GA, USA
fYear :
2003
fDate :
10-12 Dec. 2003
Firstpage :
194
Lastpage :
198
Abstract :
The flip-chip on organic substrate has relied on underfill to enhance the solder joint reliability. The invention of the wafer level underfill technology has greatly improved the production efficiency of the flip-chip process. The development of wafer level underfill materials and processes relies on the fundamental understanding of the underfill curing process. A wafer level underfill material is developed; its curing kinetics is modeled using an autocatalytic model, based on which the B-stage feasibility of the underfill is investigated. The B-stage properties of the underfill are characterized in terms of its Tg, hardness, adhesion, dicing and storage capability. The developed wafer level underfill displays the high curing latency required in the reflow process, as well as good mechanical properties after the B-stage. The underfill is applied on a 6 inch bumped wafer and B-staged. Then the wafer is diced into individual components and assembled onto the FR-4 board.
Keywords :
chip scale packaging; curing; encapsulation; flip-chip devices; microassembling; B-stage properties; FR-4 board assembly; adhesion; autocatalytic model; bumped wafer; curing kinetics; curing latency; dicing; flip-chip packaging; hardness; reflow process; solder joint reliability; underfill curing process; wafer level underfill material; wafer level underfill process; Adhesives; Assembly; Curing; Delay; Displays; Kinetic theory; Mechanical factors; Production; Semiconductor device modeling; Soldering;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronics Packaging Technology, 2003 5th Conference (EPTC 2003)
Print_ISBN :
0-7803-8205-6
Type :
conf
DOI :
10.1109/EPTC.2003.1271515
Filename :
1271515
Link To Document :
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