Two-dimensional electron gas (2DEG) IDT SAW devices on AlGaN/GaN heterostructure

Author

Wong, King-Yuen ; Tang, Wilson ; Lau, Kei May ; Chen, Kevin J.

Author_Institution

Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Hong Kong

fYear

2007

fDate

2-5 Aug. 2007

Firstpage

1041

Lastpage

1044

Abstract

Surface acoustic wave (SAW) devices using two-dimensional electron gas (2DEG) as interdigital transducers (IDTs) on AlGaN/GaN heterostructure has been demonstrated using a planar isolation technique based on the fluoride-based (CF₄) plasma treatment technique. The RF characteristics of the SAW filters with planar 2DEG IDTs are compared with SAW devices that are made of metal IDTs or hybrid metal/2DEG IDTs.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; interdigital transducers; plasma materials processing; semiconductor heterojunctions; surface acoustic wave filters; two-dimensional electron gas; wide band gap semiconductors; AlGaN-GaN; SAW filters; fluoride-based plasma treatment; heterostructure; interdigital transducers; planar isolation; surface acoustic wave devices; two-dimensional electron gas IDT SAW devices; Acoustic transducers; Acoustic waves; Aluminum gallium nitride; Electrons; Gallium nitride; Plasma devices; Plasma properties; Surface acoustic wave devices; Surface acoustic waves; Surface treatment; AlGaN/GaN and fluoride-based plasma treatment; Surface acoustic wave; two-dimensional electron gas;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology, 2007. IEEE-NANO 2007. 7th IEEE Conference on

Conference_Location

Hong Kong

Print_ISBN

978-1-4244-0607-4

Electronic_ISBN

978-1-4244-0608-1

Type

conf

DOI

10.1109/NANO.2007.4601361

Filename

4601361