Immunity to substrate effect in advanced ΩFET devices

Author

Ritzenthaler, R. ; Faynot, O. ; Jahan, C. ; Kuriyama, A. ; Brevard, L. ; Deleonibus, S. ; Cristoloveanu, S.

Author_Institution

CEA-LETI-DTS, Grenoble, France

fYear

2005

fDate

12-16 Sept. 2005

Firstpage

81

Lastpage

84

Abstract

We study the coupling effects in multiple gate SOI devices with Omega configuration, metal gate and HfO₂ dielectric. Electrical measurements together with numerical simulations show that the back gate influence is reduced for narrow devices due to a strong coupling between the different faces of the main gate. In spite of the full depletion of the transistor, this paper shows that threshold voltage, as well as subthreshold slope and DIBL+DIVSB are no longer dependent on the back gate bias. Devices are then immune to substrate effects. It is also shown for the first time that the conduction channels can be separated in wide ΩFETs using the back gate coupling.

Keywords

MOSFET; dielectric materials; semiconductor device reliability; semiconductor device testing; silicon-on-insulator; HfO₂; Omega configuration; advanced ΩFET devices; back gate bias; back gate coupling; back gate influence; conduction channel; coupling effects; dielectric materials; metal gates; multiple gate SOI devices; substrate effect immunity; subthreshold slope; threshold voltage; Chemical vapor deposition; Etching; FETs; FinFETs; Hafnium oxide; Immune system; Numerical simulation; Oxidation; Silicon on insulator technology; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference, 2005. ESSDERC 2005. Proceedings of 35th European

Print_ISBN

0-7803-9203-5

Type

conf

DOI

10.1109/ESSDER.2005.1546590

Filename

1546590