DocumentCode
2607306
Title
Evidence for reduction of noise and radiation effects in G4-FET depletion-all-around operation
Author
Akarvardar, K. ; Cristoloveanu, S. ; Dufrene, B. ; Gentil, P. ; Schrimpf, R.D. ; Blalock, B.J. ; Chroboczek, J.A. ; Mojarradi, M.
Author_Institution
IMEP, Grenoble, France
fYear
2005
fDate
12-16 Sept. 2005
Firstpage
89
Lastpage
92
Abstract
The low noise and radiation-hard operation of the SOI four-gate transistor (G4-FET) is experimentally demonstrated. When operated in depletion-all-around (DAA) mode, the G4-FET drain current flows in the middle of the silicon film, far from the interfaces. The influence of oxide and interface traps on the conduction channel is suppressed by biasing the front and back gates in depletion or, even better, in inversion. Systematic data show a significant reduction of low-frequency noise as well as a quasi-insensitivity to total-dose radiation effects, up to 10 Mrad. These features come along with superior static characteristics in DAA mode and are attractive for G4-FET-based analog circuits.
Keywords
MOSFET; elemental semiconductors; junction gate field effect transistors; radiation effects; semiconductor device noise; silicon; silicon-on-insulator; G4-FET depletion; G4-FET-based analog circuits; SOI four-gate transistor; Si; conduction channel; depletion-all-around mode; drain current; interface traps; low-frequency noise reduction; radiation-hard operation; silicon film; total-dose radiation effects; Aerospace electronics; CMOS technology; JFETs; Laboratories; MOSFETs; Noise reduction; Propulsion; Radiation effects; Silicon; Transconductance;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Device Research Conference, 2005. ESSDERC 2005. Proceedings of 35th European
Print_ISBN
0-7803-9203-5
Type
conf
DOI
10.1109/ESSDER.2005.1546592
Filename
1546592
Link To Document