Self-assembly of low-dimensional phase-change nanomaterials for information storage

Low-dimensional phase-change nanomaterials offer advantages over their bulk counterpart in data storage due to reduced threshold energies for phase transition. These features contribute to low power, scalability, and fast write/erase. We reported synthesis approach and material studies of 1-D chalcogenide materials including GeTe, In₂Se₃, and Ge₂Sb₂Te₅ nanowires targeted for nonvolatile memories. The phase-change nanowires were synthesized via thermal evaporation under VLS mechanism. The crystal structure, morphology, and composition of the synthesized nanowires were investigated by SEM, EDX, HR-TEM and XPS. The nanowires are structurally uniform with single crystalline structures. Chalcogenide nanowires exhibit significantly reduced melting points, low activation energy and excellent morphology, making them promising nano media for data storage with low energy consumption and excellent scalability.