Title :
The effect of metal thickness, overlayer and high-k surface treatment on the effective work function of metal electrode
Author :
Choi, K. ; Wen, H.-C. ; Alshareef, H. ; Harris, Roy ; Lysaght, P. ; Luan, H. ; Majhi, P. ; Lee, B.H.
Author_Institution :
Sematech, Austin, TX, USA
Abstract :
We demonstrate that the effective work function (EWF) of atomic layer deposited (ALD) TiN electrodes is a function of the TiN film thickness and that the metal/dielectric interface and the bulk metal film influence this measured response. It is shown that anneal treatments and chemical processing of the underlying dielectric surface prior to electrode deposition may be exploited to modify the effective work function of metal electrodes. The effect of physical vapor deposited (PVD) and ALD metal overlayers on the effective work function of metal electrodes is also presented.
Keywords :
annealing; atomic layer deposition; electrodes; high-k dielectric thin films; metallic thin films; surface treatment; titanium compounds; work function; ALD metal overlayers; TiN; anneal treatment; atomic layer deposition; bulk metal film; chemical processing; dielectric interface; dielectric surface; effective work function; electrode deposition; high-k surface treatment; metal electrodes; metal interface; metal thickness; physical vapor deposition; Annealing; Atomic layer deposition; Atomic measurements; Dielectric measurements; Electrodes; High K dielectric materials; High-K gate dielectrics; Surface treatment; Thickness measurement; Tin;
Conference_Titel :
Solid-State Device Research Conference, 2005. ESSDERC 2005. Proceedings of 35th European
Print_ISBN :
0-7803-9203-5
DOI :
10.1109/ESSDER.2005.1546595
