Title :
Mixed-signal and noise properties of nMOSFETs with HfSiON/TaN Gate Stacks
Author :
Rittersma, Z.M. ; Simoen, E. ; Srinivasan, P. ; Vertregt, M. ; Claeys, C.
Author_Institution :
Philips Res. Leuven, Belgium
Abstract :
Digital- and analog properties of nMOSFETs with HfSiON/TaN gate stacks are discussed. Ion/Ioff, analog gain Av, and 1/f noise as function of the Hf-content in the gate dielectric were determined. It is observed that digital specs can be met if correct metal workfunctions are used. It is further found that 1/f noise is independent of the Hf-content in the gate stack. This result suggests that the dielectric/metal gate interface should receive major attention for reducing 1/f noise in nMOSFETs with high-k/metal gate stacks. This is in particular true in view of the observed low Av values and the knowledge that pocket engineering - not applied in this experiment - will further degrade both noise and analog gain.
Keywords :
1/f noise; MOSFET; hafnium compounds; high-k dielectric thin films; semiconductor device noise; tantalum compounds; work function; 1-f noise; HfSiON-TaN; analog gain; analog properties; dielectric gate stacks; dielectric-metal gate interface; digital properties; gate dielectrics; high-k-metal gate stacks; metal workfunctions; mixed-signal properties; nMOSFET device; noise properties; pocket engineering; Atherosclerosis; CMOS technology; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Knowledge engineering; Laboratories; MOSFETs; Noise reduction; Voltage;
Conference_Titel :
Solid-State Device Research Conference, 2005. ESSDERC 2005. Proceedings of 35th European
Print_ISBN :
0-7803-9203-5
DOI :
10.1109/ESSDER.2005.1546596
