• DocumentCode
    2607367
  • Title

    Failure Analysis of Thin-Film Conductors Stressed with High Current Density by Application of Mattehiessen´s Rule

  • Author

    Fischer, F. ; Fellinger, J.

  • Author_Institution
    Siemens AG, Zentralbereich Technik, Mÿnchen, W.Germany
  • fYear
    1977
  • fDate
    28216
  • Firstpage
    250
  • Lastpage
    256
  • Abstract
    The analysis of failure mechanism due to electromigration requires precise knowledge of the resistivities and theit time dependences as a function of current density and stripe temperature. This is possible with the aid of Matthiessen´s rule. The results show a different behaviour in the changes of the residual resistivities PR and the crose-sectional areas A for pure Al and Al-Cu samples.
  • Keywords
    Conductive films; Conductivity; Current density; Electromigration; Failure analysis; Inorganic materials; Large scale integration; Semiconductor materials; Temperature dependence; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 1977. 15th Annual
  • Conference_Location
    LAs Vegas, NV, USA
  • ISSN
    0735-0791
  • Type

    conf

  • DOI
    10.1109/IRPS.1977.362801
  • Filename
    4208188
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2607367