Title :
Investigation of fully- and partially-depleted self-aligned SiGeC HBTs on thin film SOI
Author :
Avenier, Gregory ; Chevalier, Pascal ; Vandelle, Benoît ; Lenoble, Damien ; Saguin, Fabienne ; Frégonése, Sébastien ; Zimmer, Thomas ; Chantre, Alain
Author_Institution :
STMicroelectronics, Crolles, France
Abstract :
This paper presents a comprehensive experimental study of the static and dynamic characteristics of self-aligned vertical SiGeC HBTs fabricated on CMOS compatible, thin film SOI substrates. In particular, the influence of collector doping and layout on the performance of fully-depleted transistors is described in details. The potentiality of partially-depleted SOI HBTs for high speed applications is also demonstrated, with cut-off frequencies fT= 102GHz and fMAX= 154GHz reported here for the first time.
Keywords :
heterojunction bipolar transistors; semiconductor materials; semiconductor thin films; silicon compounds; silicon-on-insulator; 102 GHz; 154 GHz; CMOS compatibility; SOI HBT devices; SiGeC; collector doping; heterojunction bipolar transistors; thin film SOI substrates; BiCMOS integrated circuits; CMOS technology; Contact resistance; Cutoff frequency; Dielectrics; Doping; Heterojunction bipolar transistors; Implants; Silicon on insulator technology; Substrates;
Conference_Titel :
Solid-State Device Research Conference, 2005. ESSDERC 2005. Proceedings of 35th European
Print_ISBN :
0-7803-9203-5
DOI :
10.1109/ESSDER.2005.1546603
