Title :
Very low voltage operational amplifiers using floating gate MOS transistor
Author :
Yu, Chong-Gun ; Geiger, Randall L.
Author_Institution :
Electr. & Comput. Eng. Dept., Iowa State Univ., Ames, IA, USA
Abstract :
A threshold voltage tunable operational amplifier (op-amp) structure that can be operated with a very low power supply is presented. The use of floating gate MOS transistors as the basic op-amp circuit elements makes it possible to obtain a very low voltage op-amp because of the threshold voltage adjustability of the floating gate transistors. Good matching can also be achieved by tuning the threshold voltages. A two-step threshold voltage tuning scheme is presented. Due to the long term charge retention property of the floating gate transistors, threshold voltage tuning does not have to be done frequently, and near continuous-time operation of the op-amp can be achieved
Keywords :
MOS analogue integrated circuits; circuit tuning; operational amplifiers; charge retention property; floating gate MOS transistor; low power supply; near continuous-time operation; threshold voltage tunable; voltage adjustability; voltage tuning scheme; CMOS technology; Circuit optimization; Digital circuits; Low voltage; MOSFETs; Nonvolatile memory; Operational amplifiers; Power supplies; Threshold voltage; Tunable circuits and devices;
Conference_Titel :
Circuits and Systems, 1993., ISCAS '93, 1993 IEEE International Symposium on
Conference_Location :
Chicago, IL
Print_ISBN :
0-7803-1281-3
DOI :
10.1109/ISCAS.1993.393909