Title :
Reliability Evaluation Program and Results for a 4K Dynamic RAM
Author :
Batdorf, H.A. ; Hensler, D.H. ; Wasson, R.D.
Author_Institution :
Bell Telephone Laboratories, Incorporated, Allentown, Pennylvania 18103
Abstract :
A comprehensive reliability evaluation program for an n-channel silicon gate 4K dynamic RAM is described. The program included dynamic high-temperature accelerated aging for various time periods followed by thorough electrical testing. Results including failure mechanism descriptions, acceleration factors, and projected failure rates during system use are included. Actual failure rate during system use is under 100 FITs after less than one year of operation.
Keywords :
Accelerated aging; Acceleration; DRAM chips; Electronic switching systems; Failure analysis; Laboratories; Manufacturing processes; Qualifications; Silicon; System testing;
Conference_Titel :
Reliability Physics Symposium, 1978. 16th Annual
Conference_Location :
San Diego, CA, USA
DOI :
10.1109/IRPS.1978.362811
