• DocumentCode
    2607525
  • Title

    H-MOS Reliability

  • Author

    Rosenberg, S. ; Crook, D. ; Euzent, B.

  • Author_Institution
    Intel Corporation, Santa Clara, California 95051. (408) 987-8080
  • fYear
    1978
  • fDate
    28581
  • Firstpage
    19
  • Lastpage
    22
  • Abstract
    H-MOS is a new high performance N-channel technology with a 1-picojoule speed power product. This high performance technology is the result of scaling MOS device dimensions. This paper discusses potential failure mechanisms introduced by scaling MOS-device dimensions. Experimental data are presented which show H-MOS to be a reliable technology.
  • Keywords
    Contamination; Current density; Electric breakdown; Failure analysis; MOS devices; Maintenance; Secondary generated hot electron injection; Silicon; Testing; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 1978. 16th Annual
  • Conference_Location
    San Diego, CA, USA
  • ISSN
    0735-0791
  • Type

    conf

  • DOI
    10.1109/IRPS.1978.362812
  • Filename
    4208202
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2607525