Title :
H-MOS Reliability
Author :
Rosenberg, S. ; Crook, D. ; Euzent, B.
Author_Institution :
Intel Corporation, Santa Clara, California 95051. (408) 987-8080
Abstract :
H-MOS is a new high performance N-channel technology with a 1-picojoule speed power product. This high performance technology is the result of scaling MOS device dimensions. This paper discusses potential failure mechanisms introduced by scaling MOS-device dimensions. Experimental data are presented which show H-MOS to be a reliable technology.
Keywords :
Contamination; Current density; Electric breakdown; Failure analysis; MOS devices; Maintenance; Secondary generated hot electron injection; Silicon; Testing; Voltage;
Conference_Titel :
Reliability Physics Symposium, 1978. 16th Annual
Conference_Location :
San Diego, CA, USA
DOI :
10.1109/IRPS.1978.362812
