DocumentCode
2607547
Title
Nanotechnology: potential challenger to silicon CMOS?
Author
Yu, B. ; Meyyappan, M.
Author_Institution
Center for Nanotechnology, NASA Ames Res. Center, Moffett Field, CA, USA
fYear
2005
fDate
12-16 Sept. 2005
Firstpage
157
Lastpage
160
Abstract
We discuss the potential "challenger" of silicon chip technology at or before the end of the roadmap. These disruptive technologies are rooted in the nanoscale materials or structures, synthesized by the inexpensive bottom-up chemistry methods, which exhibit exceptional materials and electrical properties. The new technologies will help the continued advancement, not necessary through conventional geometry scaling, of solid-state chip technology in several mainstream applications such as computing and data storage.
Keywords
CMOS integrated circuits; elemental semiconductors; integrated circuit technology; nanoelectronics; semiconductor technology; silicon; electrical properties; geometry scaling; materials properties; nanoscale materials; nanoscale structures; nanotechnology; silicon CMOS; silicon chip technology; solid-state chip technology; CMOS technology; Chemical technology; Chemistry; Computational geometry; Computer applications; Nanostructured materials; Nanostructures; Nanotechnology; Silicon; Solid state circuits;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Device Research Conference, 2005. ESSDERC 2005. Proceedings of 35th European
Print_ISBN
0-7803-9203-5
Type
conf
DOI
10.1109/ESSDER.2005.1546609
Filename
1546609
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