DocumentCode :
2607590
Title :
Trade-off between electron velocity and density of states in ballistic nano-MOSFETs
Author :
De Michielis, M. ; Esseni, D. ; Driussi, F.
Author_Institution :
DIEGM, Udine, Italy
fYear :
2005
fDate :
12-16 Sept. 2005
Firstpage :
165
Lastpage :
168
Abstract :
This paper presents an analytical model for the on-current (ION) of ballistic MOSFETs that points out how the reduction of the in-plane masses implies a trade-off between the increase of the electron velocity and the reduction of the 2D density of states (D2D). Numerical simulations confirm the analytical results and demonstrate that the ION is deteriorated for materials with a very small D2D.
Keywords :
MOSFET; ballistic transport; electronic density of states; nanoelectronics; semiconductor device models; MOSFET on-current; ballistic nano-MOSFET device; density of states; electron velocity; Analytical models; Ballistic transport; Capacitance; Effective mass; Electronic switching systems; Electrons; Intrusion detection; MOSFETs; Numerical simulation; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 2005. ESSDERC 2005. Proceedings of 35th European
Print_ISBN :
0-7803-9203-5
Type :
conf
DOI :
10.1109/ESSDER.2005.1546611
Filename :
1546611
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2607590
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