DocumentCode :
26076
Title :
Current-Comparison-Based Domino: New Low-Leakage High-Speed Domino Circuit for Wide Fan-In Gates
Author :
Peiravi, Ali ; Asyaei, M.
Author_Institution :
Dept. of Electr. Eng., Ferdowsi Univ. of Mashhad, Mashhad, Iran
Volume :
21
Issue :
5
fYear :
2013
fDate :
May-13
Firstpage :
934
Lastpage :
943
Abstract :
In this paper, a new domino circuit is proposed, which has a lower leakage and higher noise immunity without dramatic speed degradation for wide fan-in gates. The technique which is utilized in this paper is based on comparison of mirrored current of the pull-up network with its worst case leakage current. The proposed circuit technique decreases the parasitic capacitance on the dynamic node, yielding a smaller keeper for wide fan-in gates to implement fast and robust circuits. Thus, the contention current and consequently power consumption and delay are reduced. The leakage current is also decreased by exploiting the footer transistor in diode configuration, which results in increased noise immunity. Simulation results of wide fan-in gates designed using a 16-nm high-performance predictive technology model demonstrate 51% power reduction and at least 2.41× noise-immunity improvement at the same delay compared to the standard domino circuits for 64-bit OR gates.
Keywords :
leakage currents; logic circuits; logic gates; current-comparison-based domino; diode configuration; footer transistor; leakage current; low-leakage high-speed domino circuit; noise immunity; parasitic capacitance; power consumption; power delay; power reduction; predictive technology model; pull-up network; size 16 nm; wide fan-in gates; Delay; Leakage current; Logic gates; MOSFETs; Noise; Threshold voltage; Domino logic; leakage-tolerant; noise immunity; wide fan-in;
fLanguage :
English
Journal_Title :
Very Large Scale Integration (VLSI) Systems, IEEE Transactions on
Publisher :
ieee
ISSN :
1063-8210
Type :
jour
DOI :
10.1109/TVLSI.2012.2202408
Filename :
6244900
Link To Document :
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