Title :
Modeling and simulation of footing effect in DRIE process
Author :
Wang, Yisong ; Guo, Yunxia ; Zhang, Haixia
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing
Abstract :
In this paper, the footing effect of DRIE process is studied and simulated. Based on the charging mechanism of the footing effect, local electric field and ion deflexion caused by the charging is very important for the precise simulation of the footing effect. Thus, we first modeled and numerically simulated the charging effect to calculate the local electric field and deflexed ions, and then couple the numerical simulation results to the DROPIE to emulate the footing profile evolution. Finally the footing effect has been simulated successfully and compared with experimental results, they agree each other very well.
Keywords :
micromechanical devices; sputter etching; surface charging; DRIE; charging; footing effect; ion deflexion; local electric field; Computational modeling; Electrons; Etching; Fabrication; Glass; Micromechanical devices; Numerical models; Numerical simulation; Quantum computing; Silicon on insulator technology; MEMS/NEMS integration; Molecular and Quantum computing; modeling and simulation;
Conference_Titel :
Nanotechnology, 2007. IEEE-NANO 2007. 7th IEEE Conference on
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-0607-4
Electronic_ISBN :
978-1-4244-0608-1
DOI :
10.1109/NANO.2007.4601383
