Title :
Advanced memory concepts for DRAM and nonvolatile memories
Author :
Horiguchi, Fumio
Author_Institution :
Dept. of Computational Sci. & Eng., Toyo Univ., Saitama, Japan
Abstract :
This paper describes the advanced DRAM and nonvolatile memory concepts, current statuses and challenges. Leading edge DRAM and nonvolatile memories are encountering scaling limitations such as transistor performance degradation and Vth variation. In order to overcome these constraints, a 3D approach is being adopted in many devices.
Keywords :
DRAM chips; electric breakdown; integrated circuit reliability; DRAM memory; nonvolatile memories; scaling limitations; transistor performance degradation; Capacitance; Capacitors; Degradation; Doping; FETs; Flash memory; MOSFETs; Nonvolatile memory; Random access memory; Transistors;
Conference_Titel :
Solid-State Device Research Conference, 2005. ESSDERC 2005. Proceedings of 35th European
Print_ISBN :
0-7803-9203-5
DOI :
10.1109/ESSDER.2005.1546615
