• DocumentCode
    2607649
  • Title

    Advanced memory concepts for DRAM and nonvolatile memories

  • Author

    Horiguchi, Fumio

  • Author_Institution
    Dept. of Computational Sci. & Eng., Toyo Univ., Saitama, Japan
  • fYear
    2005
  • fDate
    12-16 Sept. 2005
  • Firstpage
    181
  • Lastpage
    184
  • Abstract
    This paper describes the advanced DRAM and nonvolatile memory concepts, current statuses and challenges. Leading edge DRAM and nonvolatile memories are encountering scaling limitations such as transistor performance degradation and Vth variation. In order to overcome these constraints, a 3D approach is being adopted in many devices.
  • Keywords
    DRAM chips; electric breakdown; integrated circuit reliability; DRAM memory; nonvolatile memories; scaling limitations; transistor performance degradation; Capacitance; Capacitors; Degradation; Doping; FETs; Flash memory; MOSFETs; Nonvolatile memory; Random access memory; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference, 2005. ESSDERC 2005. Proceedings of 35th European
  • Print_ISBN
    0-7803-9203-5
  • Type

    conf

  • DOI
    10.1109/ESSDER.2005.1546615
  • Filename
    1546615
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2607649