Title :
Failure analysis for the 0.13 μm Cu/low k (Black Diamond™) interconnection by the passive voltage contrast
Author :
Hongyu, Li ; Jie, Su Yong ; Fo, Tsang Chi ; Patrick, Yew Wee Chum ; Ling, Koh Mei ; Yin, Wong Lai ; Leijun, Tang ; Hong, Li Wei ; Kuo, Chang Chang ; Bliznetsov, Vladimir ; Lin, Zhang
Author_Institution :
Inst. of Microelectron., Singapore, Singapore
Abstract :
Passive voltage contrast (PVC) was used for localization in the failure analysis of a million via chain. The voltage contrast defects were found in the million via chain, after 1000 hrs thermal treatment cycling, under the JEOL scanning electron microscope (SEM). The main failure modes of the via chain after thermal treatment cycling were due to the polymer effect of the bottom vias. The bottom via condition was improved by dual damascene (DD) cleaning. The failure open rate of the million via chain was reduced from 0.435%/hr to 0.307%/hr after thermal treatment cycling.
Keywords :
copper; failure analysis; integrated circuit interconnections; scanning electron microscopy; surface cleaning; thermal stresses; 0.13 micron; 1000 hr; Black Diamond interconnection; Cu; Cu /low-k interconnection; SEM; bottom via polymer effect; dual damascene cleaning; failure analysis; failure modes; fault localization; passive voltage contrast method; process optimization; scanning electron microscope; thermal treatment cycle; voltage contrast defects; Carbon; Copper; Dry etching; Electronic equipment testing; Electronic packaging thermal management; Electronics packaging; Failure analysis; Passivation; Voltage; Wet etching;
Conference_Titel :
Electronics Packaging Technology, 2003 5th Conference (EPTC 2003)
Print_ISBN :
0-7803-8205-6
DOI :
10.1109/EPTC.2003.1271542
